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Same model may have multiple batches, images only for reference.
IRF7341QTRPBF
Same model may have multiple batches, images only for reference.

IRF7341QTRPBF

Part No IRF7341QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 55V 5.1A 8-SOIC
Datasheet
IRF7341QTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 5.1A
Maximum Rds On at Id,Vgs 50 mOhm @ 5.1A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 780pF @ 25V
Maximum Power Dissipation 2.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 093069-IRF7341QTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7341QTRPBF CAD Model

Description

The supply and demand status is balanced.

  • Product Type: Dual N-Channel MOSFET transistor
  • Designed For: Use in various applications
  • Maximum Power Dissipation: 2.4W
  • Drain-Source Breakdown Voltage: 55V
  • Package: 8-SO package
  • Maximum Rds On at Id,Vgs: 50 mOhm @ 5.1A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1820 $58.2400
775+ $0.1495 $115.8625
1,200+ $0.1448 $173.7600
1,650+ $0.1401 $231.1650
2,135+ $0.1354 $289.0790
2,855+ $0.1214 $346.5970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,030 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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