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Same model may have multiple batches, images only for reference.
IRF7350TRPBF real image282
Same model may have multiple batches, images only for reference.

IRF7350TRPBF

Part No IRF7350TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 100V 2.1A 8-SOIC
Datasheet
IRF7350TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.1A, 1.5A
Maximum Rds On at Id,Vgs 210 mOhm @ 2.1A, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 117621-IRF7350TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7350TRPBF CAD Model

Description

The IRF7350TRPBF is a N and P-channel MOSFET transistor manufactured by Infineon Technologies.

  • Designed for: use in various applications such as power supplies, motor control circuits, and DC/DC converters
  • Low On-State Resistance: 210 mOhm
  • Suitable for: high current applications
  • Maximum Drain-Source Voltage: 100 V
  • Continuous Drain Current: 2.1 A
  • Package Type: 8-SO, which is a surface mount package
  • Reliable and Efficient: solution for power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3112 $50.8464
53+ $1.8963 $100.5039
82+ $1.8371 $150.6422
113+ $1.7778 $200.8914
146+ $1.7186 $250.9156
195+ $1.5408 $300.4560
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Availability: 1,000 pieces
MOQ: 22 pcs
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