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Same model may have multiple batches, images only for reference.
IRF7379PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7379PBF

Part No IRF7379PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8-SOIC
Datasheet
IRF7379PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A, 4.3A
Maximum Rds On at Id,Vgs 45 mOhm @ 5.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 520pF @ 25V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046620-IRF7379PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7379PBF CAD Model

Description

The Infineon Technologies IRF7379PBF is a N and P-Channel FET type transistor with a maximum power dissipation of 2.5W.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.8A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Rds On: 45 mOhm @ 5.8A, 10V
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C
  • Application: Discrete semiconductor products
  • Manufacturer: Infineon Technologies

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485+ $0.2402 $116.4970
750+ $0.2322 $174.1500
1,030+ $0.2252 $231.9560
1,330+ $0.2171 $288.7430
1,780+ $0.1952 $347.4560
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