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IRF7433PBF

Part No IRF7433PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 8.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 20nC @ 4.5V
Max Input Capacitance 1877pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 8.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046643-IRF7433PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7433PBF CAD Model

Description

The IRF7433PBF is a high-quality electronic component manufactured by Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Technology: MOSFET
  • Polarity: P-channel
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 8.9A (Ta) @ 25°C
  • Maximum Gate Charge: 20nC @ 4.5V
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.8374 $65.0244
13+ $8.8923 $115.5999
21+ $8.6140 $180.8940
28+ $8.3368 $233.4304
36+ $8.0584 $290.1024
48+ $7.2245 $346.7760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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Shipping Information

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