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IRF7450PBF Real Image IRF7450PBF Real Image1 IRF7450PBF Real Image2 IRF7450PBF Real Image3 IRF7450PBF Real Image4 IRF7450PBF Real Image5 IRF7450PBF Real Image6 IRF7450PBF Real Image7
Same model may have multiple batches, images only for reference.
IRF7450PBF Real Image IRF7450PBF Real Image1 IRF7450PBF Real Image2 IRF7450PBF Real Image3 IRF7450PBF Real Image4 IRF7450PBF Real Image5 IRF7450PBF Real Image6 IRF7450PBF Real Image7
IRF7450PBF Real Image IRF7450PBF Real Image1 IRF7450PBF Real Image2 IRF7450PBF Real Image3 IRF7450PBF Real Image4 IRF7450PBF Real Image5 IRF7450PBF Real Image6 IRF7450PBF Real Image7
Same model may have multiple batches, images only for reference.

IRF7450PBF

Part No IRF7450PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SMPS MOSFET HEXFET Power MOSFET | MOSFET N-CH 200V 2.5A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 2.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 170mOhm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 39nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 940pF at 25V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187278-IRF7450PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7450PBF CAD Model

Description

The IRF7450PBF from Infineon Technologies is an N-channel MOSFET transistor designed for use in discrete semiconductor products. With a drain-source breakdown voltage of 200V and a continuous drain current of 2.5A, this MOSFET features a maximum Rds On of 170mOhm @ 1.5A, 10V.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 2.5A
  • Rds On (Maximum): 170mOhm @ 1.5A, 10V
  • Gate-Source Voltage Threshold: 5.5V @ 250μA
  • Gate Charge: 39nC @ 10V
  • Input Capacitance: 940pF @ 25V
  • Package: 8-SOIC
  • Power Dissipation: 2.5W
  • Availability: Open market
  • Status: Limited supply and demand

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7223 $50.5610
170+ $0.5926 $100.7420
265+ $0.5741 $152.1365
360+ $0.5556 $200.0160
470+ $0.5371 $252.4370
625+ $0.4815 $300.9375
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