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IRF7459

Name: IRF7459
Brand: Infineon Technologies
SKU: 461823
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7459
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 20V 12A 8-SOIC
Datasheet	IRF7459 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	35nC @ 4.5V
Max Input Capacitance	2480pF @ 10V
Maximum Gate-Source Voltage	±12V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	9 mOhm @ 12A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	1046648-IRF7459
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF7459 CAD Model

Description

The Infineon Technologies IRF7459 MOSFET is a N-Channel power transistor that is suitable for use in a wide range of applications.

Maximum power dissipation: 2.5W (Ta)
Drain-source breakdown voltage: 20V
Continuous drain current: 12A (Ta) @ 25°C
Gate-source threshold voltage: 2V @ 250μA
Maximum gate charge: 35nC @ 4.5V
Maximum Rds On @ Id,Vgs: 9 mOhm @ 12A, 10V
Mounting Technology: SMD (SMT)
Package: 8-SO
Temperature range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
250+	$0.2356	$58.9000
600+	$0.1940	$116.4000
930+	$0.1871	$174.0030
1,275+	$0.1813	$231.1575
1,645+	$0.1756	$288.8620
2,210+	$0.1571	$347.1910

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,850 pieces

MOQ: 250 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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