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IRF7460PBF

Part No IRF7460PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 12A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 2050pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046651-IRF7460PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7460PBF CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 1046651-IRF7460PBF is a N-Channel polarity electronic component.

  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ 12A, 10V: 10 mOhm
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage @ 250μA: 3V
  • Maximum Gate Charge @ 4.5V: 19nC
  • Maximum Input Capacitance @ 10V: 2050pF
  • Drive Voltage: 4.5V, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand: Sufficient
  • Quantity per Package: 95

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.2950 $58.3600
20+ $5.9852 $119.7040
30+ $5.7993 $173.9790
42+ $5.6121 $235.7082
54+ $5.4250 $292.9500
72+ $4.8637 $350.1864
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,700 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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