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IRF7467

Part No IRF7467
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 32nC @ 4.5V
Max Input Capacitance 2530pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001871-IRF7467
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian IRF7467 CAD Model

Description

The Infineon Technologies 167146 MOSFET is a N-Channel polarity component used in power management, industrial applications.

  • Polarity: N-Channel
  • Applications: Power management, industrial applications
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A (Ta) @ 25°C
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 11A, 10V
  • Drive Voltage: 2.8V, 10V
  • Status: Obsolete(EOL)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 32nC @ 4.5V
  • Maximum Input Capacitance: 2530pF @ 15V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5382 $59.2020
265+ $0.4424 $117.2360
405+ $0.4285 $173.5425
560+ $0.4146 $232.1760
725+ $0.4008 $290.5800
965+ $0.3592 $346.6280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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