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IRF7488TRPBF

Part No IRF7488TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 6.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 1680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 29 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001882-IRF7488TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7488TRPBF CAD Model

Description

The Infineon Technologies IRF7488TRPBF is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current at 25°C: 6.3A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 57nC @ 10V
  • Maximum Input Capacitance: 1680pF @ 25V
  • Maximum Rds On at Id,Vgs: 29 mOhm @ 3.8A, 10V
  • Packaging: Reel
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3227 $51.0994
53+ $1.9059 $101.0127
82+ $1.8463 $151.3966
112+ $1.7867 $200.1104
145+ $1.7272 $250.4440
194+ $1.5485 $300.4090
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,980 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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