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Same model may have multiple batches, images only for reference.
IRF7504TRPBF
Same model may have multiple batches, images only for reference.

IRF7504TRPBF

Part No IRF7504TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 1.7A MICRO8
Datasheet
IRF7504TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.7A
Maximum Rds On at Id,Vgs 270 mOhm @ 1.2A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8.2nC @ 4.5V
Max Input Capacitance 240pF @ 15V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Win Source Part Number 001893-IRF7504TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7504TRPBF CAD Model

Description

The Infineon Technologies 001893-IRF7504TRPBF is a dual P-Channel FET that is designed for use in various applications.

  • Status: Active
  • Win Source Part Number: 001893-IRF7504TRPBF
  • Packaging: Reel - TR
  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 20V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: Micro8

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Quantity Unit Price Ext. Price
5+ $11.7294 $58.6470
11+ $9.6241 $105.8651
17+ $9.3234 $158.4978
23+ $9.0226 $207.5198
29+ $8.7219 $252.9351
39+ $7.8196 $304.9644
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