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Same model may have multiple batches, images only for reference.
IRF7521D1TR
Same model may have multiple batches, images only for reference.

IRF7521D1TR

Part No IRF7521D1TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.4A MICRO8
Datasheet
IRF7521D1TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8nC @ 4.5V
Max Input Capacitance 260pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 135 mOhm @ 1.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 001897-IRF7521D1TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7521D1TR CAD Model

Description

The Infineon Technologies IRF7521D1TR MOSFET is a high-performance N-channel field-effect transistor with a Schottky diode (isolated) feature.

  • Maximum Power Dissipation: 1.3W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 2.4A (Ta)
  • Maximum Rds On at Id, Vgs: 135 mOhm @ 1.7A, 4.5V
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 8nC @ 4.5V
  • Package: Micro8 case
  • Application: Discrete semiconductor products

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