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IRF7530TRPBF Infineon Technologies IRF7530TRPBF real image
Same model may have multiple batches, images only for reference.
IRF7530TRPBF Infineon Technologies IRF7530TRPBF real image
IRF7530TRPBF Infineon Technologies IRF7530TRPBF real image
Same model may have multiple batches, images only for reference.

IRF7530TRPBF

Part No IRF7530TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.4A MICRO8
Datasheet
IRF7530TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.4A
Maximum Rds On at Id,Vgs 30 mOhm @ 5.4A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 1310pF @ 15V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Win Source Part Number 001901-IRF7530TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7530TRPBF CAD Model

Description

The IRF7530TRPBF is a 2 N-Channel (Dual) FET transistor from Infineon Technologies.

  • Feature: Standard feature transistor
  • Application: Discrete semiconductor products
  • Maximum Power Dissipation: 1.3W
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 5.4A
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 26nC @ 4.5V
  • Maximum Input Capacitance: 1310pF @ 15V
  • Maximum Rds On at Id,Vgs: 30 mOhm @ 5.4A, 4.5V
  • Status: Active
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)

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