The Infineon Technologies MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a P-Channel device with a Drain-Source Breakdown Voltage of 20V and Continuous Drain Current of 3.6A at 25°C.

• Device Type: P-Channel MOSFET
• Manufacturer: Infineon Technologies
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 3.6A @ 25°C
• Gate-Source Threshold Voltage: 700mV @ 250μA
• Max Gate Charge: 20nC @ 4.5V
• Max Input Capacitance: 590pF @ 15V
• Maximum Rds On at Id,Vgs: 90 mOhm @ 2.4A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Status: Obsolete (EOL)
• Temperature Range: -55°C to 150°C (TJ)
• Case/Package: Micro8
• Application: Discrete Semiconductor Products
• Supply and Demand: Limited