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IRF7702TRPBF

Part No IRF7702TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 8A 8-TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 81nC @ 4.5V
Max Input Capacitance 3470pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046692-IRF7702TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7702TRPBF CAD Model

Description

The Infineon Technologies 1046692-IRF7702TRPBF is a P-channel MOSFET technology-based electronic component with a drain-source breakdown voltage of 12V and a continuous drain current of 8A (Tc).

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 8A (Tc)
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 81nC @ 4.5V
  • Mounting Type: SMD (SMT)
  • Package: 8-TSSOP
  • Power Dissipation: 1.5W (Tc)
  • Maximum Rds On: 14 mOhm @ 8A, 4.5V
  • Application: Discrete semiconductor products
  • Status: Obsolete (EOL)
  • Quantity per Package: 4k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7069 $59.7415
85+ $1.4006 $119.0510
130+ $1.3568 $176.3840
180+ $1.3130 $236.3400
230+ $1.2693 $291.9390
305+ $1.1379 $347.0595
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,840 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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