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Same model may have multiple batches, images only for reference.
IRF7704TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7704TRPBF

Part No IRF7704TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH Si 40V 4.6A 8-Pin TSSOP T/R / MOSFET P-CH 40V 4.6A 8-TSSOP
Datasheet
IRF7704TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 38nC @ 4.5V
Max Input Capacitance 3150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 46 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046694-IRF7704TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 4k pcs
Family Name IRF7704
Introduction Date February 06, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF7704TRPBF CAD Model

Description

The IRF7704TRPBF from Infineon Technologies is a P-channel MOSFET transistor with a drain-source breakdown voltage of 40V and a maximum continuous drain current of 4.6A.

  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current: 4.6A
  • Maximum Rds On: 46 mOhm @ 4.6A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 38nC @ 4.5V
  • Maximum Input Capacitance: 3150pF @ 25V
  • Technology: MOSFET
  • Mounting: Reel - TR
  • Product Status: Obsolete (EOL)
  • Packaging: 8-TSSOP
  • Application: Discrete Semiconductor Products

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