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Same model may have multiple batches, images only for reference.
IRF7707TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7707TRPBF

Part No IRF7707TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7A 8-TSSOP
Datasheet
IRF7707TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 47nC @ 4.5V
Max Input Capacitance 2361pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046700-IRF7707TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7707TRPBF CAD Model

Description

The Infineon Technologies IRF7707TRPBF is a MOSFET transistor with a P-Channel polarity.

  • Channel Type: P-Channel
  • Power Dissipation: 1.5W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 7A (Ta)
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Rds On @ Id, Vgs: 22 mOhm @ 7A, 4.5V
  • Case/Package: 8-TSSOP
  • Category: Discrete semiconductor products
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8125 $52.8125
150+ $0.6667 $100.0050
235+ $0.6459 $151.7865
320+ $0.6250 $200.0000
415+ $0.6042 $250.7430
555+ $0.5417 $300.6435
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Availability: 8,400 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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