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Same model may have multiple batches, images only for reference.
IRF7739L2TR1PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7739L2TR1PBF

Part No IRF7739L2TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 375A DIRECTFET
Datasheet
IRF7739L2TR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 46A (Ta), 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 330nC @ 10V
Max Input Capacitance 11880pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 1 mOhm @ 160A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET L8
Dimension DirectFET Isometric L8
Win Source Part Number 1046701-IRF7739L2TR1PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7739L2TR1PBF CAD Model

Description

The Infineon Technologies 1046701-IRF7739L2TR1PBF is a MOSFET technology component with N-channel polarity.

  • Technology: MOSFET
  • Channel Polarity: N-Channel
  • Power Dissipation: 3.8W (Ta), 125W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Mounting Type: SMD (SMT)
  • Package: DIRECTFET L8
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 1 mOhm @ 160A, 10V
  • Supply and Demand Status: Balanced
  • Quantity per Package: 1k pcs
  • Win Source Part Number: 1046701-IRF7739L2TR1PBF

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