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Same model may have multiple batches, images only for reference.
IRF7752TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7752TRPBF

Part No IRF7752TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4.6A 8TSSOP
Datasheet
IRF7752TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.6A
Maximum Rds On at Id,Vgs 30 mOhm @ 4.6A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9nC @ 4.5V
Max Input Capacitance 861pF @ 25V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1046707-IRF7752TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7752TRPBF CAD Model

Description

The Infineon Technologies IRF7752TRPBF is a dual N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 4.6A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.6A @ 25°C
  • Maximum Power Dissipation: 1W
  • Maximum Rds On: 30 mOhm @ 4.6A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 9nC @ 4.5V
  • Package: 8-TSSOP
  • Quantity per Package: 4k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
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Availability: 34,100 pieces
MOQ: 70 pcs
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