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IRF7805APBF Real Image
Same model may have multiple batches, images only for reference.

IRF7805APBF

Part No IRF7805APBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8-SOIC
Datasheet
IRF7805APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 31nC @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046720-IRF7805APBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7805APBF CAD Model

Description

The Infineon Technologies IRF7805APBF is an N-channel MOSFET with a power dissipation of 2.5W (Ta).

  • Packaging: Tube/rail
  • Mounting: SMD (SMT)
  • Drive Voltage: 4.5V
  • Maximum Rds on @ 7A, 4.5V: 11 mOhm
  • Application: Discrete semiconductor products
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 13A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge @ 5V: 31nC
  • Maximum Input Capacitance: -

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Pricing & Ordering

Quantity Unit Price Ext. Price
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16+ $8.5676 $137.0816
24+ $8.2998 $199.1952
33+ $8.0320 $265.0560
42+ $7.7642 $326.0964
56+ $6.9609 $389.8104
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Availability: 19,600 pieces
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