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Same model may have multiple batches, images only for reference.
IRF7805PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7805PBF

Part No IRF7805PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8-SOIC
Datasheet
IRF7805PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 31nC @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001930-IRF7805PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7805PBF CAD Model

Description

The Infineon Technologies IRF7805PBF is a MOSFET with N-Channel polarity and a Drain-Source Breakdown Voltage of 30V.

  • Continuous Drain Current: 13A @ 25°C
  • Maximum Rds On at Id,Vgs: 11 mOhm @ 7A, 4.5V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 31nC @ 5V
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5735 $51.6150
215+ $0.4706 $101.1790
330+ $0.4559 $150.4470
455+ $0.4412 $200.7460
590+ $0.4265 $251.6350
785+ $0.3824 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81,730 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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