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IRF7807ATRPBF Real Image IRF7807ATRPBF real image
Same model may have multiple batches, images only for reference.
IRF7807ATRPBF Real Image IRF7807ATRPBF real image
IRF7807ATRPBF Real Image IRF7807ATRPBF real image
Same model may have multiple batches, images only for reference.

IRF7807ATRPBF

Part No IRF7807ATRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Datasheet
IRF7807ATRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001935-IRF7807ATRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7807ATRPBF CAD Model

Description

The Infineon Technologies 001935-IRF7807ATRPBF is a N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 8.3A @ 25°C.

  • Maximum Rds On at Id,Vgs: 25 mOhm @ 7A, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 17nC @ 5V
  • Drive Voltage: 4.5V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Power Dissipation (max): 2.5W (Ta)
  • Temperature Range: -55°C to 150°C (TJ)

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