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Same model may have multiple batches, images only for reference.
IRF7807D2TR Real Image
Same model may have multiple batches, images only for reference.

IRF7807D2TR

Part No IRF7807D2TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A 8-SOIC / Trans MOSFET N-CH Si 30V 8.3A 8-Pin SOIC T/R
Datasheet
IRF7807D2TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series FETKY
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 17nC @ 5V
Vgs (Maximum) ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Maximum) 2.5W (Tc)
Rds On (Maximum) @ Id, Vgs 25 mOhm @ 7A, 4.5V
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 777031-IRF7807D2TR
Popularity Medium
Supply and Demand Status Limited
Family Name IRF7807D2
Introduction Date November 08, 1999
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF7807D2TR CAD Model

Description

The Infineon Technologies IRF7807D2TR FETKY MOSFET is a high-performance transistor that is designed to be used in a variety of applications.

  • Continuous drain current: 8.3A (Ta)
  • Power dissipation: 2.5W (Tc)
  • Package: 8-SOIC
  • Mounting Type: SMD
  • Gate Charge (Qg): 17nC @ 5V
  • Drain-source voltage: 30V
  • Family: IRF7807D2
  • Status: Obsolete (EOL)
  • ECCN: EAR99

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