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IRF7811AVTR

Part No IRF7811AVTR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 30V 10.8A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 10.8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Maximum) at Id, Vgs 14mOhm at 15A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 26nC at 5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1801pF at 10V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 714557-IRF7811AVTR
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7811AVTR CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel transistor with a drain-source breakdown voltage of 30V and continuous drain current of 10.8A.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10.8A
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 1801pF @ 10V
  • Gate Charge: 26nC @ 5V
  • Power Dissipation: 2.5W
  • Rds On: 14mOhm @ 15A and 4.5V
  • Package: 8-SOIC
  • Status: Obsolete
  • Drive Voltage: 4.5V
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8343 $58.4010
170+ $0.6846 $116.3820
265+ $0.6632 $175.7480
360+ $0.6419 $231.0840
470+ $0.6204 $291.5880
625+ $0.5562 $347.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,400 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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