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Same model may have multiple batches, images only for reference.
IRF7828TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7828TRPBF

Part No IRF7828TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R / MOSFET N-CH 30V 13.6A 8-SO
Datasheet
IRF7828TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 5V
Max Input Capacitance 1010pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 10A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001957-IRF7828TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 4k pcs
Family Name IRF7828
Introduction Date December 05, 2002
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF7828TRPBF CAD Model

Description

The Infineon Technologies IRF7828TRPBF is a N-channel MOSFET transistor that is widely used in various electronic applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13.6A @ 25°C
  • Maximum Rds on @ Id,Vgs: 12.5 mOhm @ 10A, 4.5V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Power Dissipation: 2.5W (Ta)
  • Package: 8-SO
  • Gate FET Type: Logic Level
  • Suitable for: Discrete Semiconductor Products

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