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IRF7832PBF Infineon Technologies IRF7832PBF Real Image
IRF7832PBF Infineon Technologies IRF7832PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7832PBF

Part No IRF7832PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A 8-SOIC
Datasheet
IRF7832PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.32V @ 250μA
Max Gate Charge 51nC @ 4.5V
Max Input Capacitance 4310pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 4 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 155°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001958-IRF7832PBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Computers & Computer Peripherals, Communications & Networking, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF7832PBF CAD Model

Description

The Infineon Technologies IRF7832PBF is a N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 20A.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 20A
  • Package: 8-SO
  • Maximum Power: 2.5W
  • Operating Temperature Range: -55°C to 155°C
  • Gate-Source Threshold Voltage: 2.32V @ 250μA
  • Maximum Input Capacitance: 4310pF @ 15V
  • Status: Not for new designs
  • Mounting: SMD (SMT) technology
  • Application: Computers and computer peripherals, communications and networking, and power management
  • Maximum Rds On @ Id, Vgs: 4 mOhm @ 20A, 10V

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