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Same model may have multiple batches, images only for reference.
IRF7842TR Real Image
Same model may have multiple batches, images only for reference.

IRF7842TR

Part No IRF7842TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 40V 18A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 5mOhm at 17A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.25V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 50nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4500pF at 20V
Power Dissipation (Maximum) 2.5W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 710506-IRF7842TR
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7842TR CAD Model

Description

The Infineon Technologies 710506-IRF7842TR is a MOSFET transistor with N-channel polarity from Infineon Technologies.

  • Package: 8-SOIC
  • Polarity: N-Channel
  • Power Dissipation: 2.5W
  • Vds - Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 18A
  • Rds On (Maximum): 5mOhm @ 17A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 2.25V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 4500pF @ 20V
  • Status: Obsolete

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Quantity Unit Price Ext. Price
125+ $0.4148 $51.8500
260+ $0.3881 $100.9060
405+ $0.3747 $151.7535
575+ $0.3479 $200.0425
750+ $0.3346 $250.9500
935+ $0.3212 $300.3220
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