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Same model may have multiple batches, images only for reference.
IRF7902TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7902TRPBF

Part No IRF7902TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
Datasheet
IRF7902TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.4A, 9.7A
Maximum Rds On at Id,Vgs 22.6 mOhm @ 6.4A, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 6.9nC @ 4.5V
Max Input Capacitance 580pF @ 15V
Maximum Power Dissipation 1.4W, 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 001968-IRF7902TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian IRF7902TRPBF CAD Model

Description

The Infineon Technologies IRF7902TRPBF is a dual N-Channel MOSFET with a logic level gate feature.

  • Package: 8-SO
  • Power Dissipation: 1.4W or 2W
  • Operating Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.4A or 9.7A @ 25°C
  • Gate-Source Threshold Voltage: 2.25V @ 25μA
  • Maximum Input Capacitance: 580pF @ 15V
  • Mounting: SMD (SMT) technology
  • Application: Power management and consumer electronics
  • Maximum Rds On @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V

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Quantity Unit Price Ext. Price
90+ $0.6768 $60.9120
210+ $0.5555 $116.6550
325+ $0.5380 $174.8500
445+ $0.5207 $231.7115
575+ $0.5033 $289.3975
770+ $0.4513 $347.5010
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Availability: 55,900 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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