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IRF7907TRPBF

Part No IRF7907TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.1A, 11A
Maximum Rds On at Id,Vgs 16.4 mOhm @ 9.1A, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 850pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046744-IRF7907TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF7907
Introduction Date January 04, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF7907TRPBF CAD Model

Description

The Infineon Technologies 440418 is a dual N-channel MOSFET designed for use in various electronic applications.

  • Package: 8-SO
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9.1A, 11A @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 10nC @ 4.5V
  • Maximum Rds On: 16.4 mOhm @ 9.1A, 10V
  • Status: Active
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8494 $50.9640
145+ $0.6970 $101.0650
225+ $0.6752 $151.9200
310+ $0.6534 $202.5540
400+ $0.6316 $252.6400
530+ $0.5663 $300.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,160 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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