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Same model may have multiple batches, images only for reference.
IRF8113TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8113TRPBF

Part No IRF8113TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17.2A 8-SOIC
Datasheet
IRF8113TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 36nC @ 4.5V
Max Input Capacitance 2910pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 17.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017537-IRF8113TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF8113TRPBF CAD Model

Description

The Infineon Technologies IRF8113TRPBF is an N-channel MOSFET that is widely used in various electronic devices.

  • Maximum Power Dissipation: 2.5W
  • Product Status: Active
  • Used in: Discrete semiconductor products
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7176 $50.2320
170+ $0.5888 $100.0960
265+ $0.5704 $151.1560
365+ $0.5520 $201.4800
470+ $0.5336 $250.7920
630+ $0.4784 $301.3920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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