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IRF8327STRPBF

Part No IRF8327STRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A SQ
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1430pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 7.3 mOhm @ 14A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SQ
Dimension DirectFET Isometric SQ
Win Source Part Number 069415-IRF8327STRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF8327STRPBF CAD Model

Description

The Infineon Technologies 069415-IRF8327STRPBF is a high-performance N-channel MOSFET transistor.

  • Designed for use in: various applications such as DC-DC converters, motor control, and power supplies
  • Maximum Power Dissipation: 2.2W (Ta), 42W (Tc)
  • Continuous Drain Current: 14A (Ta), 60A (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Package: directFET isometric SQ package
  • Gate-Source Threshold Voltage: 2.4V @ 25μA
  • Maximum Rds On @ Id, Vgs: 7.3 mOhm @ 14A, 10V
  • Status: active component
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4155 $51.9375
295+ $0.3410 $100.5950
455+ $0.3303 $150.2865
630+ $0.3197 $201.4110
810+ $0.3090 $250.2900
1,085+ $0.2770 $300.5450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 96,600 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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