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Same model may have multiple batches, images only for reference.
IRF8513PBF Real Image
Same model may have multiple batches, images only for reference.

IRF8513PBF

Part No IRF8513PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A/11A 8-SOIC
Datasheet
IRF8513PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A, 11A
Maximum Rds On at Id,Vgs 15.5 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 8.6nC @ 4.5V
Max Input Capacitance 766pF @ 15V
Maximum Power Dissipation 1.5W, 2.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 069419-IRF8513PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF8513PBF CAD Model

Description

The Infineon Technologies IRF8513PBF is an obsolete (EOL) dual N-channel FET transistor with a logic level gate feature.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A, 11A @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 8.6nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 15.5 mOhm @ 8A, 10V
  • Mounting: Surface
  • Case/Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6145 $58.3775
230+ $0.5036 $115.8280
355+ $0.4886 $173.4530
490+ $0.4724 $231.4760
635+ $0.4562 $289.6870
850+ $0.4100 $348.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,610 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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