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Same model may have multiple batches, images only for reference.
IRF8513TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8513TRPBF

Part No IRF8513TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A/11A 8-SOIC
Datasheet
IRF8513TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A, 11A
Maximum Rds On at Id,Vgs 15.5 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 8.6nC @ 4.5V
Max Input Capacitance 766pF @ 15V
Maximum Power Dissipation 1.5W, 2.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 108458-IRF8513TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF8513TRPBF CAD Model

Description

The Infineon Technologies IRF8513TRPBF is a dual N-channel MOSFET transistor that is commonly used in discrete semiconductor products.

  • Gate Type: Logic Level
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A and 11A @ 25°C
  • Maximum Rds On at Id,Vgs: 15.5 mOhm @ 8A, 10V
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 8.6nC @ 4.5V
  • Maximum Input Capacitance: 766pF @ 15V
  • Case/Package: 8-SO
  • Maximum Power Dissipation: 1.5W and 2.4W

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255+ $0.4608 $117.5040
390+ $0.4458 $173.8620
535+ $0.4320 $231.1200
695+ $0.4181 $290.5795
930+ $0.3742 $348.0060
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Availability: 12,900 pieces
MOQ: 105 pcs
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