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Same model may have multiple batches, images only for reference.
IRFB3004GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFB3004GPBF

Part No IRFB3004GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 9200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 1.75 mOhm @ 195A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205337-IRFB3004GPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB3004GPBF CAD Model

Description

The Infineon Technologies 205337-IRFB3004GPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 195A at 25°C.

  • Maximum Power Dissipation: 380W (Tc)
  • Maximum Rds On at Id,Vgs: 1.75 mOhm @ 195A, 10V
  • FET Mounting: TO-220AB package
  • Category: Discrete Semiconductor Products
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate Charge: 240nC @ 10V
  • Packaging: tube/rail
  • Popularity Rating: Medium
  • Supply and Demand Status: Balance

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Quantity Unit Price Ext. Price
5+ $13.4442 $67.2210
11+ $11.0314 $121.3454
17+ $10.6872 $181.6824
23+ $10.3419 $237.8637
29+ $9.9977 $289.9333
39+ $8.9628 $349.5492
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Availability: 4,790 pieces
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