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IRF8707GPBF

Part No IRF8707GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 9.3nC @ 4.5V
Max Input Capacitance 760pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11.9 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 069420-IRF8707GPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian IRF8707GPBF CAD Model

Description

The Infineon Technologies IRF8707GPBF is a N-Channel MOSFET that has an 8-SO case/package.

  • Product Category: Discrete Semiconductor Product
  • Power Dissipation (Max): 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 11A (Ta)
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Max Gate Charge: 9.3nC @ 4.5V
  • Max Input Capacitance: 760pF @ 15V
  • Maximum Rds On at Id,Vgs: 11.9 mOhm @ 11A, 10V
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,500 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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Shipping Information

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