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IRF8707PBF

Part No IRF8707PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 9.3nC @ 4.5V
Max Input Capacitance 760pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11.9 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 069422-IRF8707PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8707PBF CAD Model

Description

The Infineon Technologies IRF8707PBF MOSFET is an N-channel field-effect transistor with a maximum power dissipation of 2.5W (Ta).

  • Continuous Drain Current: 11A (Ta) @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On at Id, Vgs: 11.9 mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 9.3nC @ 4.5V
  • Maximum Input Capacitance: 760pF @ 15V
  • Case: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9433 $51.8815
115+ $0.8836 $101.6140
180+ $0.8538 $153.6840
255+ $0.7941 $202.4955
330+ $0.7642 $252.1860
410+ $0.7344 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,420 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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