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Same model may have multiple batches, images only for reference.
IRF9230 Real Image
Same model may have multiple batches, images only for reference.

IRF9230

Part No IRF9230
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 200V, P-CHANNEL REPETITIVE AVALA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 940mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AA (TO-3)
Package / Case TO-204AA, TO-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 160162-IRF9230
Ultra Librarian 3D Model Ultra Librarian IRF9230 CAD Model

Description

The IRF9230 is a single P-channel MOSFET from Infineon Technologies.

  • Series: HEXFET®
  • Category: Discrete Semiconductor Products
  • Package: Bulk
  • Drain-to-Source Voltage (Vdss): 200 V
  • Continuous Drain Current (Id): 6.5A @ 25°C
  • On-Resistance (Rds On): 940mOhm @ 6.5A and 10V
  • Gate Charge (Qg): 31 nC @ 10V
  • Input Capacitance (Ciss): 700 pF @ 25V
  • Temperature Range: -55°C to 150°C
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7660 $58.8300
12+ $9.6546 $115.8552
19+ $9.3520 $177.6880
26+ $9.0506 $235.3156
34+ $8.7491 $297.4694
45+ $7.8436 $352.9620
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Availability: 11,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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