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IRF9328TRPBF

Part No IRF9328TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 12A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 1680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11.9 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046768-IRF9328TRPBF
Family Name IRF9328
Introduction Date May 26, 2010
ECCN EAR99
Country of Origin China, Thailand
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9328TRPBF CAD Model

Description

Infineon Technologies IRF9328TRPBF is a P-channel MOSFET that has a maximum power dissipation of 2.5W (Ta) and a drain-source breakdown voltage of 30V.

  • Continuous Drain Current: 12A (Tc)
  • Maximum Rds On: 11.9 mOhm @ 12A, 10V
  • Gate-Source Threshold Voltage: 2.4V @ 25μA
  • Maximum Gate Charge: 52nC @ 10V
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Lifecycle Status: Active
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2593 $50.3720
85+ $1.1796 $100.2660
135+ $1.1397 $153.8595
190+ $1.0600 $201.4000
250+ $1.0202 $255.0500
310+ $0.9804 $303.9240
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