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Same model may have multiple batches, images only for reference.
IRF9520NSTRR Real Image
Same model may have multiple batches, images only for reference.

IRF9520NSTRR

Part No IRF9520NSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.8A D2PAK
Datasheet
IRF9520NSTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046779-IRF9520NSTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9520NSTRR CAD Model

Description

The Infineon Technologies MOSFET is a P-Channel device with a Drain-Source Breakdown Voltage of 100V and Continuous Drain Current of 6.8A (Tc) @ 25°C.

  • Power Dissipation: 3.8W (Ta) and 48W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 350pF @ 25V
  • Maximum Rds On: 480 mOhm @ 4A, 10V
  • Mounting: SMD (SMT)
  • Packaging: D2PAK
  • Temperature Range: -55°C to 175°C (TJ)
  • Lifecycle Status: Obsolete (EOL)

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