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Same model may have multiple batches, images only for reference.
IRF9953TR Real Image
Same model may have multiple batches, images only for reference.

IRF9953TR

Part No IRF9953TR
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET 2P-CH 30V 2.3A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 2.3A
Rds On (Maximum) at Id, Vgs 250mOhm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 190pF at 15V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 714560-IRF9953TR
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9953TR CAD Model

Description

The supply and demand status is balanced.

  • Transistor Polarity: 2 P-Channel (Dual)
  • Mounting Style: SMD
  • FET Feature: Logic Level Gate
  • Manufacturer Package: 8-SOIC
  • Supplier Device Package: 8-SO
  • Maximum Power: 2W
  • Vds - Drain-Source Breakdown Voltage: 30V
  • Id - Continuous Drain Current: 2.3A
  • Rds On (Maximum) @ Id, Vgs: 250mOhm @ 1A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 1V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 190pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5327 $61.3080
95+ $1.2577 $119.4815
145+ $1.2183 $176.6535
200+ $1.1790 $235.8000
255+ $1.1398 $290.6490
340+ $1.0219 $347.4460
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Availability: 5,000 pieces
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