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IRF9Z34NSTRRPBF

Name: IRF9Z34NSTRRPBF
Brand: Infineon Technologies
SKU: 160234
Availability: InStock
Rating: 4.85 (48 reviews)

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Part No	IRF9Z34NSTRRPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 55V 19A D2PAK
Datasheet	IRF9Z34NSTRRPBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Not For New Designs
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	35nC @ 10V
Max Input Capacitance	620pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs	100 mOhm @ 10A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	D2PAK
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	069442-IRF9Z34NSTRRPBF
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IRF9Z34NSTRRPBF CAD Model

Alternative Products

Description

The Infineon Technologies IRF9Z34NSTRRPBF is a P-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current @ 25°C of 19A (Tc).

Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 35nC @ 10V
Maximum Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±20V
Packaging: D2PAK
Status: not for new designs

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
90+	$0.5808	$52.2720
185+	$0.5441	$100.6585
290+	$0.5257	$152.4530
410+	$0.4890	$200.4900
535+	$0.4706	$251.7710
665+	$0.4522	$300.7130

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 13,480 pieces

MOQ: 90 pcs

Order Increment : 1 pcs

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