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IRFB260NPBF

Part No IRFB260NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 56A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 4220pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090152-IRFB260NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFB260
Introduction Date July 08, 2004
ECCN EAR99
Country of Origin China, Malaysia, Mexico, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFB260NPBF CAD Model

Description

The Infineon Technologies IRFB260NPBF is an N-Channel MOSFET with a Power Dissipation of 380W (Tc).

  • Package Type: TO-220AB
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current at 25°C: 56A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 40 mOhm @ 34A, 10V
  • Popularity: high
  • Halogen-Free: compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8554 $51.3240
125+ $0.8013 $100.1625
195+ $0.7742 $150.9690
280+ $0.7201 $201.6280
365+ $0.6930 $252.9450
455+ $0.6659 $302.9845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,350 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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