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IRFB4110PBF

Part No IRFB4110PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 9620pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 370W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017573-IRFB4110PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRFB4110
Introduction Date February 21, 2006
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFB4110PBF CAD Model

Description

The Infineon Technologies 017573-IRFB4110PBF is an N-Channel MOSFET that is designed to be used in a variety of electronic applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 120A (Tc)
  • Max Rds On at Id, Vgs: 4.5 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 210nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6439 $51.5120
170+ $0.6032 $102.5440
260+ $0.5828 $151.5280
370+ $0.5420 $200.5400
480+ $0.5217 $250.4160
600+ $0.5013 $300.7800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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