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IRFB4215

Part No IRFB4215
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 115A TO-220AB
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 4080pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 54A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046815-IRFB4215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB4215 CAD Model

Description

The Infineon Technologies 1046815-IRFB4215 is a N-channel MOSFET transistor designed for high power switching applications.

  • Manufacturer: Infineon Technologies
  • Product Name: 1046815-IRFB4215
  • Type: N-channel MOSFET transistor
  • Applications: High power switching applications
  • Power Dissipation: 270W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 115A @ 25°C
  • Package: TO-220AB
  • Maximum Rds On: 9 mOhm @ 54A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8790 $232.9350
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,032 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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