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Same model may have multiple batches, images only for reference.
IRFB4215PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB4215PBF

Part No IRFB4215PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 115A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 4080pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 54A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205341-IRFB4215PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFB4215PBF CAD Model

Description

The Infineon Technologies IRFB4215PBF is a N-Channel MOSFET that has a TO-220AB case/package.

  • Package: TO-220AB
  • Category: Discrete Semiconductor Product
  • Power Dissipation (Max): 270W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 115A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 170nC @ 10V
  • Max Input Capacitance: 4080pF @ 25V
  • Maximum Rds On at Id,Vgs: 9 mOhm @ 54A, 10V
  • Supply and Demand Status: Balanced
  • Package Quantity: 50

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150+ $2.3176 $347.6400
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