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IRFB4510GPBF

Part No IRFB4510GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 62A TO-220AB / Trans MOSFET N-CH Si 100V 62A 3-Pin(3+Tab) TO-220AB
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3180pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 140W (Tc)
Rds On (Maximum) @ Id, Vgs 13.5 mOhm @ 37A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 777043-IRFB4510GPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Family Name IRFB4510G
Introduction Date April 11, 2012
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFB4510GPBF CAD Model

Description

The Infineon Technologies IRFB4510GPBF is a HEXFET MOSFET technology-based discrete semiconductor product.

  • Package: Tube
  • Mounting: Through hole
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Halogen-free: No
  • Family Name: IRFB4510G
  • Category: Discrete Semiconductor Products
  • Drive Voltage (max Rds on, min Rds on): 10V
  • Manufacturer Package: TO-220AB
  • Channel Type: N
  • Drain Source Voltage: 100V
  • Vgs(th) (maximum) @ Id: 4V @ 100μA
  • Gate Charge (Qg) (maximum) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 3180pF @ 50V
  • Vgs (maximum): ±20V
  • Power Dissipation (maximum): 140W (Tc)
  • Rds on (maximum) @ Id, Vgs: 13.5 mOhm @ 37A @ 10V
  • Quantity per package: 50
  • Supply and Demand Status: Limited

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