The BUK7C3R8-80EJ is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is particularly suitable for use in automotive applications and various other high-efficiency power management systems.

Key Features

• Low On-State Resistance: This product features an extremely low on-state resistance (R_DS(on)) of 3.8 mΩ at V_GS=10 V, which enhances its efficiency in conducting applications and reduces power losses.
• High Current Capability: With a continuous drain current (I_D) of 80 A, the BUK7C3R8-80EJ can handle high current loads, making it ideal for demanding applications.
• Standard Level Gate Drive: The device operates at standard gate drive voltages, making it compatible with a wide range of existing control circuits and drivers.
• Robust Thermal and Electrical Performance: Encapsulated in a LFPAK56 (Power-SO8) package, the BUK7C3R8-80EJ is designed to offer excellent thermal conduction and electrical isolation, ensuring stable performance even under harsh conditions.
• Automotive Qualified: This MOSFET is AEC-Q101 qualified, confirming its reliability and suitability for automotive applications, including electric power steering, DC/DC converters, and motor drives.

Applications

The versatility of the BUK7C3R8-80EJ allows it to be integrated into a broad spectrum of applications. It is particularly adept in automotive systems but is also well-suited for power supply units, DC-DC converters, motor control circuits, and general-purpose power switching applications.

Environmental and Quality Standards

NXP's commitment to environmental stewardship and quality is evident in the BUK7C3R8-80EJ. The device complies with the rigorous standards set for automotive components and is lead-free, halogen-free, and RoHS compliant, ensuring both sustainability and high performance.