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Same model may have multiple batches, images only for reference.
IRFB5620PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB5620PBF

Part No IRFB5620PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
Datasheet
IRFB5620PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1710pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 72.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 083667-IRFB5620PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFB5620
Introduction Date September 05, 2008
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFB5620PBF CAD Model

Description

The IRFB5620PBF is an N-Channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 144W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 25A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Rds On at Id, Vgs: 72.5 mOhm @ 15A, 10V
  • Package: TO-220AB
  • Mounting Type: Through-Hole

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100+ $1.0237 $102.3700
155+ $0.9917 $153.7135
210+ $0.9597 $201.5370
270+ $0.9277 $250.4790
365+ $0.8318 $303.6070
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