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Same model may have multiple batches, images only for reference.
IRFB7440PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB7440PBF

Part No IRFB7440PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 40V 120A TO220
Datasheet
IRFB7440PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.9V @ 100μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 4730pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 143W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205346-IRFB7440PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB7440PBF CAD Model

Description

The IRFB7440PBF is a N-Channel MOSFET from Infineon Technologies.

  • Maximum Power Dissipation: 143W
  • Continuous Drain Current: 120A @ 25°C
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Rds On: 2.5 mOhm @ 100A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 100μA
  • Maximum Gate Charge: 135nC @ 10V
  • Package: TO-220AB
  • Packaging: Tube/Rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4007 $50.0875
305+ $0.3288 $100.2840
475+ $0.3185 $151.2875
650+ $0.3083 $200.3950
840+ $0.2980 $250.3200
1,125+ $0.2672 $300.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,200 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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