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Same model may have multiple batches, images only for reference.
IRFF430
Same model may have multiple batches, images only for reference.

IRFF430

Part No IRFF430
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-39
Continuous Drain Current (ID) 2.5 A
Drain to Source Breakdown Voltage 500 V
Drain to Source Resistance 1.5 Ω
Drain to Source Voltage (Vdss) 500 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Max Power Dissipation 25 W
Min Operating Temperature -55 °C
Mount Through Hole
Nominal Vgs 4 V
Number of Elements 1
Number of Pins 3
On-State Resistance 10.5 Ω
Power Dissipation 25 W
Radiation Hardening No
REACH SVHC No SVHC
RoHS Non-Compliant
Schedule B 8541290080, 8541290080
Win Source Part Number 992473-IRFF430
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFF430 CAD Model

Description

The IRFF430 is a transistor from Infineon Technologies. It is a single element RF MOSFET with a drain to source voltage (Vdss) of 500 V.

  • Continuous Drain Current (Id) @ 25°C: 2.5 A
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 1.5 Ω
  • Gate to Source Voltage (Vgs): 20 V
  • Nominal Vgs: 4 V
  • Mounting Type: Through-hole
  • Package: TO-39
  • Suitable for: transistors, FETs, and MOSFETs

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Quantity Unit Price Ext. Price
2+ $40.7462 $81.4924
3+ $33.4328 $100.2984
5+ $32.3881 $161.9405
7+ $31.3433 $219.4031
9+ $30.2985 $272.6865
12+ $27.1642 $325.9704
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Availability: 93 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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