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Same model may have multiple batches, images only for reference.
IRFH5006TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5006TRPBF

Part No IRFH5006TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A 8-PQFN
Datasheet
IRFH5006TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 4175pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 069471-IRFH5006TRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian IRFH5006TRPBF CAD Model

Description

The Infineon Technologies IRFH5006TRPBF is a N-channel MOSFET used in power management, motor drive, and control.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 21A @ 25°C and 100A @ Tc
  • Maximum Rds On at Id,Vgs: 4.1 mOhm @ 50A and 10V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 100nC @ 10V
  • Maximum Input Capacitance: 4175pF @ 30V
  • Package: PQFN (5x6)
  • Mounting: SMD (SMT)
  • Power Dissipation: 3.6W (Ta) and 156W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
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70+ $1.4328 $100.2960
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2985 $253.2075
260+ $1.1642 $302.6920
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